Degradation mechanisms of 2MeV proton irradiated AlGaN/GaN HEMTs

被引：38

作者：

Greenlee, Jordan D. ^{[1
]}

Specht, Petra ^{[2
]}

Anderson, Travis J. ^{[1
]}

Koehler, Andrew D. ^{[1
]}

Weaver, Bradley D. ^{[1
]}

Luysberg, Martina ^{[3
]}

Dubon, Oscar D. ^{[2
]}

Kub, Francis J. ^{[1
]}

Weatherford, Todd R. ^{[4
]}

Hobart, Karl D. ^{[1
]}

机构：

[1] US Naval Res Lab, Washington, DC 20375 USA

[2] Univ Calif Berkeley, Berkeley, CA 94720 USA

[3] Res Ctr Juelich GmbH, ERC, D-52425 Julich, Germany

[4] Naval Postgrad Sch, Monterey, CA 93943 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 08期

关键词：

MOBILITY;

D O I：

10.1063/1.4929583

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 x 10(14) H+/cm(2), the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively. (C) 2015 AIP Publishing LLC.

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页数：4

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