Electrical stability enhancement of the amorphous In-Ga-Zn-O thin film transistor by formation of Au nanoparticles on the back-channel surface

被引：10
作者：
Cho, Byungsu [1 ,2 ]
Lee, Jaesang [3 ]
Seo, Hyungtak [4 ]
Jeon, Hyeongtag [1 ,3 ]
机构：
[1] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
[2] Samsung Display Co Ltd, Tangjeong 336741, Chungcheongnam, South Korea
[3] Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 133791, South Korea
[4] Ajou Univ, Dept Mat Sci & Engn, Suwon 443739, South Korea
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 10期
基金：
新加坡国家研究基金会;
关键词：
Threshold voltage - Zinc oxide - Light absorption - Amorphous semiconductors - Gold nanoparticles - Incident light - Thin film circuits - Surface plasmons - Amorphous films - Gallium compounds - Thin films - II-VI semiconductors - Semiconducting indium compounds;
D O I：
10.1063/1.4795536
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate a significant improvement in various electrical instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) by implanting Au nanoparticles (NPs) on the a-IGZO back-channel. This TFT showed the enhanced stability of threshold voltage (V-th) under ambient humidity, illumination stress, and a-IGZO thickness variation tests. Application of back-channel Au NPs to a-IGZO TFT is regarded to control the surface potential, to lead reversible carrier trap/injection, and to increase incident UV light absorption by local surface plasmon. Au NPs are formed by e-beam evaporation, and therefore, this technique can be applicable to the TFT manufacturing process. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795536]
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页数：4
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