Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

被引：113

作者：

Kinoshita, Toru ^{[1
,2
]}

Hironaka, Keiichiro ^{[1
]}

Obata, Toshiyuki ^{[1
]}

Nagashima, Toru ^{[1
,3
]}

Dalmau, Rafael ^{[4
]}

Schlesser, Raoul ^{[4
]}

Moody, Baxter ^{[4
]}

Xie, Jinqiao ^{[4
]}

Inoue, Shin-ichiro ^{[2
,5
]}

Kumagai, Yoshinao ^{[3
]}

Koukitu, Akinori ^{[3
]}

Sitar, Zlatko ^{[4
,6
]}

机构：

[1] Tokuyama Corp, Tsukuba Res Labs, Tsukuba, Ibaraki 3004247, Japan

[2] Kobe Univ, Dept Mech Engn, Kobe, Hyogo 6578501, Japan

[3] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

[4] HexaTech Inc, Morrisville, NC 27560 USA

[5] Natl Inst Informat & Commun Technol, Adv ICT Res Inst, Kobe, Hyogo 6512492, Japan

[6] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 12期

基金：

日本学术振兴会;

关键词：

GROWTH; CRYSTALS;

D O I：

10.1143/APEX.5.122101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) were fabricated on AlN substrates. The AlN substrates were prepared by growing thick hydride vapor phase epitaxy (HVPE)-AlN layers on bulk AlN substrates prepared by physical vapor transport (PVT). After growing an LED structure, the PVT-AlN substrates were removed by mechanical polishing. This process allowed the fabrication of DUV-LEDs on HVPE-AlN substrates with high crystalline quality and DUV optical transparency. The DUV-LEDs exhibited a single emission peaking at 268nm through the HVPE-AlN substrates. The output power as high as 28mW was obtained at an injection current of 250 mA. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

共 20 条

[1] Faceting in AlN bulk crystal growth and its impact on optical properties of the crystals [J].

Bickermann, Matthias ;

Epelbaum, Boris M. ;

Filip, Octavian ;

Tautz, Barbara ;

Heimann, Paul ;

Winnacker, Albrecht .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4) :449-452

[2] UV transparent single-crystalline bulk AlN substrates [J].

Bickermann, Matthias ;

Epelbaum, Boris M. ;

Filip, Octavian ;

Heimann, Paul ;

Nagata, Shunro ;

Winnacker, Albrecht .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 1, 2010, 7 (01) :21-24

[3] Large-area AlN substrates for electronic applications: An industrial perspective [J].

Bondokov, Robert T. ;

Mueller, Stephan G. ;

Morgan, Kenneth E. ;

Slack, Glen A. ;

Schujman, Sandra ;

Wood, Mark C. ;

Smart, Joseph A. ;

Schowalter, Leo J. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (17) :4020-4026

[4]

Chen J., 2011, INT SEM DEV RES S

[5] On the origin of the 265 nm absorption band in AlN bulk crystals [J].

Collazo, Ramon ;

Xie, Jinqiao ;

Gaddy, Benjamin E. ;

Bryan, Zachary ;

Kirste, Ronny ;

Hoffmann, Marc ;

Dalmau, Rafael ;

Moody, Baxter ;

Kumagai, Yoshinao ;

Nagashima, Toru ;

Kubota, Yuki ;

Kinoshita, Toru ;

Koukitu, Akinori ;

Irving, Douglas L. ;

Sitar, Zlatko .

APPLIED PHYSICS LETTERS, 2012, 100 (19)

[6] Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications [J].

Collazo, Ramon ;

Mita, Seiji ;

Xie, Jinqiao ;

Rice, Anthony ;

Tweedie, James ;

Dalmau, Rafael ;

Sitar, Zlatko .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8) :2031-2033

[7] Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates [J].

Dalmau, R. ;

Moody, B. ;

Schlesser, R. ;

Mita, S. ;

Xie, J. ;

Feneberg, M. ;

Neuschl, B. ;

Thonke, K. ;

Collazo, R. ;

Rice, A. ;

Tweedie, J. ;

Sitar, Z. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (05) :H530-H535

[8] Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells [J].

Fujioka, Akira ;

Misaki, Takao ;

Murayama, Takashi ;

Narukawa, Yukio ;

Mukai, Takashi .

APPLIED PHYSICS EXPRESS, 2010, 3 (04)

[9] High Output Power from 260nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance [J].

Grandusky, James R. ;

Gibb, Shawn R. ;

Mendrick, Mark C. ;

Moe, Craig ;

Wraback, Michael ;

Schowalter, Leo J. .

APPLIED PHYSICS EXPRESS, 2011, 4 (08)

[10] Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates [J].

Grandusky, James R. ;

Gibb, Shawn R. ;

Mendrick, Mark C. ;

Schowalter, Leo J. .

APPLIED PHYSICS EXPRESS, 2010, 3 (07)

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