Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

被引：112

作者：

Kinoshita, Toru ^{[1
,2
]}

Hironaka, Keiichiro ^{[1
]}

Obata, Toshiyuki ^{[1
]}

Nagashima, Toru ^{[1
,3
]}

Dalmau, Rafael ^{[4
]}

Schlesser, Raoul ^{[4
]}

Moody, Baxter ^{[4
]}

Xie, Jinqiao ^{[4
]}

Inoue, Shin-ichiro ^{[2
,5
]}

Kumagai, Yoshinao ^{[3
]}

Koukitu, Akinori ^{[3
]}

Sitar, Zlatko ^{[4
,6
]}

机构：

[1] Tokuyama Corp, Tsukuba Res Labs, Tsukuba, Ibaraki 3004247, Japan

[2] Kobe Univ, Dept Mech Engn, Kobe, Hyogo 6578501, Japan

[3] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

[4] HexaTech Inc, Morrisville, NC 27560 USA

[5] Natl Inst Informat & Commun Technol, Adv ICT Res Inst, Kobe, Hyogo 6512492, Japan

[6] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 12期

基金：

日本学术振兴会;

关键词：

GROWTH; CRYSTALS;

D O I：

10.1143/APEX.5.122101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) were fabricated on AlN substrates. The AlN substrates were prepared by growing thick hydride vapor phase epitaxy (HVPE)-AlN layers on bulk AlN substrates prepared by physical vapor transport (PVT). After growing an LED structure, the PVT-AlN substrates were removed by mechanical polishing. This process allowed the fabrication of DUV-LEDs on HVPE-AlN substrates with high crystalline quality and DUV optical transparency. The DUV-LEDs exhibited a single emission peaking at 268nm through the HVPE-AlN substrates. The output power as high as 28mW was obtained at an injection current of 250 mA. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

共 20 条

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