Pulsed laser deposition of conductive indium tin oxide thin films

被引:11
作者
Petukhov, I. A. [1 ]
Shatokhin, A. N. [1 ]
Putilin, F. N. [1 ]
Rumyantseva, M. N. [1 ]
Kozlovskii, V. F. [1 ]
Gaskov, A. M. [1 ]
Zuev, D. A. [2 ]
Lotin, A. A. [2 ]
Novodvorsky, O. A. [2 ]
Khramova, A. D. [2 ]
机构
[1] Moscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, Russia
[2] Russian Acad Sci, Inst Laser & Informat Technol, Shatura 140700, Moscow Oblast, Russia
关键词
ITO; PROPERTY; GROWTH;
D O I
10.1134/S0020168512100068
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin indium tin oxide (ITO) films have been grown on quartz glass substrates by pulsed laser deposition. The influence of ablation target composition and deposition conditions on the growth rate, optical transmission spectra, and carrier mobility and concentration of the films has been examined. The average surface roughness of the ITO films grown at substrate temperatures above 300A degrees C is 2 nm. The films grown at an oxygen partial pressure of 5 mTorr using ablation targets with Sn/(In + Sn) = 5% possess high transmission (85-95%) in the visible range and low resistivity (1.8 x 10(-4) Omega cm).
引用
收藏
页码:1020 / 1025
页数:6
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