The microstructure and optical properties of p-type microcrystalline silicon thin films characterized by ex-situ spectroscopic ellipsometry

被引：8

作者：

Zhang, He ^{[1
]}

Zhang, Xiaodan ^{[1
]}

Hou, Guofu ^{[1
]}

Wei, Changchun ^{[1
]}

Sun, Jian ^{[1
]}

Geng, Xinhua ^{[1
]}

Xiong, Shaozhen ^{[1
]}

Zhao, Ying ^{[1
]}

机构：

[1] Nankai Univ, Inst Photoelect Thin Film Devices & Tech, Tianjin 300071, Peoples R China

来源：

THIN SOLID FILMS | 2012年 / 521卷

关键词：

Spectroscopic ellipsometry; Microcrystalline silicon; Crystalline volume fraction; Gas doping; Optical function; SOLAR-CELLS; CRYSTALLINE; GROWTH;

D O I：

10.1016/j.tsf.2012.03.081

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ex-situ spectroscopy ellipsometry (SE) was applied on the similar to 25 nm thick p-type hydrogenated microcrystalline silicon (p-mu c-Si:H) thin films deposited by very high frequency plasma enhanced chemical vapor deposition. Several optical models were built and compared with each other for ex-situ SE data analysis considering both the oxide surface and the heterogeneous bulk condition to reveal the material microstructure and obtain optical function. The SE results imply that the p-mu c-Si:H has both an oxide rich surface and the bulk with a flexible amorphous phase, the bandgap of which depends on the gas doping ratio (DR) of B2H6/SiH4. At the same time, we were able to distinguish p-mu c-Si:H materials in crystalline volume fraction by ex-situ SE as confirmed by Raman scattering. In this way, we showed the effect of DR on mu c-Si:H thin films in microstructural and optical properties. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：17 / 21

页数：5

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