The Influences of Annealing Temperatures on the Properties of the Sol-Gel Deposition SrBi4Ti4O15 thin films

被引：0

作者：

Tzou, Wen Cheng ^{[2
]}

Diao, Chien Chen ^{[3
]}

Chan, Chao Chin ^{[4
]}

Wu, Chia Ching ^{[3
]}

Yang, Chang Fu ^{[1
]}

Shiu, Hung Chiuan ^{[2
]}

机构：

[1] Natl Univ Kaohsiung, Dept Chem & Mat Engn, Kaohsiung, Taiwan

[2] Southern Taiwan Univ, Dept Electroopt Engn, Tainan, Taiwan

[3] Kao Yuan Univ, Dept Elect Engn, Kaohsiung, Taiwan

[4] Kao Yuan Univ, Grad Sch Chem & Biochem Engn, Dept Greenergy Sci & Technol, Kaohsiung, Taiwan

来源：

ADVANCED MATERIALS, PTS 1-3 | 2012年 / 415-417卷

关键词：

SrBi4Ti4O15; Sol-gel; Annealing temperature; CERAMICS;

D O I：

10.4028/www.scientific.net/AMR.415-417.1855

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, SrBi4Ti4O15 (SBT) thin films were deposited onto the SiO2/p-Si(100) and Pt/Ti/SiO2/p-Si(100) substrates by using sol-gel method. After deposition, the SBT thin films were then heated by a rapid thermal annealing (RTA) process conducted in air for 1min at 600-800 degrees C. The surface morphologies and the crystalline structures of the SBT thin films were investigated by using SEM and XRD patterns. The grain sizes increased and the pores decreased with rising RTA temperature. In addition, the coercive field decreased and the remanent polarization and saturation polarization increased with rising RTA temperature. The InJ-E-1/2 curves of the SBT thin films were also investigated to find the leakage current mechanisms correspond either to the Schottky emission or to the Poole-Frenkel emission.

引用

页码：1855 / +

页数：2

共 8 条

[1] [Anonymous], INSTABILITIES SILICO
[2] The effect of excess bismuth on the ferroelectric properties of SrBi2Ta2O9 thin films
Chen, TC
Li, TK
Zhang, XB
Desu, SB
[J]. JOURNAL OF MATERIALS RESEARCH, 1997, 12 (06) : 1569 - 1575
[3] FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES
DEARAUJO, CAP
CUCHIARO, JD
MCMILLAN, LD
SCOTT, MC
SCOTT, JF
[J]. NATURE, 1995, 374 (6523) : 627 - 629
[4] Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories
Shannigrahi, SR
Jang, HM
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (07) : 1051 - 1053
[5] Sze S.M., 2013, SEMICONDUCTOR DEVICE
[6] Development of non-stoichiometric SrBi4+2xTi4O15+3x (-0.04 ≤ X ≤ 0.04) ceramics
Wei, Y. -F.
Yang, C. -F.
Chen, C-Y.
Huang, C. -J.
Kao, C. -H.
[J]. ADVANCES IN APPLIED CERAMICS, 2009, 108 (02) : 102 - 105
[7] The crystal structures and dielectric properties of Bi2O3 doped SrBi2Ta2O9 ceramics
Wei, Yin-Fang
Kao, Chia-Hsiung
Yang, Cheng-Fu
Huang, Hong-Hsin
Huang, Chien-Jung
[J]. MATERIALS LETTERS, 2007, 61 (23-24) : 4643 - 4646
[8] Fabrication of one-transistor-capacitor structure of nonvolatile TFT ferroelectric RAM devices using Ba(Zr0.1Ti0.9)O3 gated oxide film
Yang, Cheng-Fu
Chen, Kai-Huang
Chen, Ying-Chung
Chang, Ting-Chang
[J]. IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2007, 54 (09) : 1726 - 1730

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