Localized surface phonon polariton resonances in polar gallium nitride

被引:63
作者
Feng, Kaijun [1 ]
Streyer, William [2 ]
Islam, S. M. [1 ]
Verma, Jai [1 ]
Jena, Debdeep [1 ,3 ]
Wasserman, Daniel [2 ]
Hoffman, Anthony J. [1 ]
机构
[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[3] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14850 USA
基金
美国国家科学基金会;
关键词
NEGATIVE-INDEX METAMATERIALS; METAL NANOPARTICLES; INFRARED PROPERTIES; SILICON-CARBIDE; BORON-NITRIDE; GAN; PLASMONICS; LIGHT; POLARIZATION; EXCITATION;
D O I
10.1063/1.4929502
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate the excitation of localized surface phonon polaritons in an array of sub-diffraction pucks fabricated in an epitaxial layer of gallium nitride (GaN) on a silicon carbide (SiC) substrate. The array is characterized via polarization-and angle-dependent reflection spectroscopy in the mid-infrared, and coupling to several localized modes is observed in the GaN Reststrahlen band (13.4-18.0 mu m). The same structure is simulated using finite element methods and the charge density of the modes are studied; transverse dipole modes are identified for the transverse electric and magnetic polarizations and a quadrupole mode is identified for the transverse magnetic polarization. The measured mid-infrared spectrum agrees well with numerically simulated spectra. This work could enable optoelectronic structures and devices that support surface modes at mid-and far-infrared wavelengths. (C) 2015 AIP Publishing LLC.
引用
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页数:5
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