Properties of single crystalline semiconducting CoSb3

被引:608
作者
Caillat, T
Borshchevsky, A
Fleurial, JP
机构
[1] Jet Propulsion Laboratory, California Institute of Technology, MS 277/207, Pasadena, CA 91109
关键词
D O I
10.1063/1.363405
中图分类号
O59 [应用物理学];
学科分类号
摘要
A study of the thermoelectric properties of the skutterudite compound CoSb3 was carried out on single crystals grown by the Bridgman gradient freeze technique. p- and n-type samples were obtained over a wide range of carrier concentration, Undoped As-grown crystals show p-type conductivity while n-type samples were obtained by addition of Te or Pd. Samples were characterized by x-ray diffractometry, electron microprobe analysis, and density measurements. The physical properties of CoSb, such as Linear thermal expansion coefficient, sound velocity, and Debye temperature were also determined and are presented. Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect measurements were performed between room temperature and about 900 K, Exceptionally high Hall mobilities were obtained on p-type samples with a maximum room-temperature Hall mobility of 3300 cm(2) V-1 s(-1) at a carrier concentration of 1 x 10(17) cm(-3). The results of the transport property measurements are discussed and an in agreement with some recent predictions based on band structure calculations, The potential of CoSb3 for thermoelectric applications is evaluated. (C) 1996 American Institute of Physics.
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页码:4442 / 4449
页数:8
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