Atomic layer deposition of SrS and BaS thin films using cyclopentadienyl precursors

被引:36
作者
Ihanus, J
Hänninen, T
Hatanpää, T
Aaltonen, T
Mutikainen, I
Sajavaara, T
Keinonen, J
Ritala, M
Leskelä, M
机构
[1] Univ Helsinki, Dept Chem, Inorgan Chem Lab, FIN-00014 Helsinki, Finland
[2] Univ Helsinki, Dept Phys Sci, Accelerator Lab, FIN-00014 Helsinki, Finland
关键词
D O I
10.1021/cm0111130
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
SrS and BaS thin films were grown on glass substrates using an atomic layer deposition (ALD) technique and ((C5Pr3H2)-Pr-i)(2)Sr(THF) (1), (C5Me5)(2)Sr(THF)(x) (2), (C5Me5)(2)Ba(THF)(x) (3), and H2S as precursors. Deposition temperatures were 120-460, 155-400, and 180-400 degreesC with 1, 2, and 3, respectively. Growth rate of the films varied between 0.6 and 3.0 Angstrom/cycle and all the films were polycrystalline as deposited. The amount of C, H, and 0 residues was found to be 0.1-0.6 at. % in the films grown at 300 degreesC as determined by time-of-flight elastic recoil detection analysis (TOF-ERDA). Growth mechanisms for the films grown at different temperatures were also proposed. Crystal structures of 2 and 3 were determined.
引用
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页码:1937 / 1944
页数:8
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