Effect of Annealing Temperature on Phase Transition Characteristics of VO2 Thin Film

The mixture of hydrogen peroxide and vanadium pentaoxide powder was used as a precursor to prepare V sol on the muscovite substrate. Then the V2O5 films were annealed to fabricate the VO2 films at different temperatures from 450 degrees C to 570 degrees C. SEM, XRD, and XPS were employed to analyze the morphology and microstructure of the films; FTIR was used to test the infrared transmittance of the samples at different temperatures and to determine the transformation temperature and hysteresis loop width of the VO2 films. The results show that the VO2 films fabricated by the V sol have a high infrared transmittance switching efficiency in the metal-insulator transition, and the infrared transmittance at the high temperature is merely 2%. The morphology, microstructure and phase transition characteristics of the films are influenced by the annealing temperature. The VO2 films which have been annealed at 510 degrees C exhibit the excellent thermochromic phase transition characteristics with the low phase transition temperature and the hysteresis width.