Aging Assessment of Discrete SiC MOSFETs under High Temperature Cycling Tests

被引：0

作者：

Ugur, Enes ^{[1
]}

Akin, Bilal ^{[1
]}

机构：

[1] Univ Texas Dallas, Power Elect & Drives Lab, Elect & Comp Sci Dept, Richardson, TX 75083 USA

来源：

2017 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2017年

基金：

美国国家科学基金会;

关键词：

Silicon Carbide (SIC); power MOSFETs; reliability; robustness; aging assessment; accelerated power cycling; POWER TRANSISTORS; ELECTRONICS;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Silicon carbide (SiC) power MOSFETs have been becoming a strong alternative to silicon (Si) technology in high voltage, high-frequency, and high-temperature applications. Despite their growing market share, limited field information is available regarding the aging facts under thermal stress and long term reliability of discrete SiC MOSFETs. In this paper, discrete SiC devices are thermally aged through a custom designed high temperature power cycling setup controlled by TI 28335 microcontroller. On-state resistance variation of devices is continuously monitored and stored in each cycle, while other electrical parameters are captured at certain intervals by utilizing an automated curve tracer. Variation of electrical parameters throughout the cycles is presented in order to assess their correlation with the aging/degradation state of the switch. The discussions regarding aging precursors are supported by structural changes obtained through scanning acoustic microscopy (SAM) and cross-sectioning.

引用

页码：3496 / 3501

页数：6

共 21 条

[1]

[Anonymous], 2010, ANN C PROGN HLTH MAN

[2]

[Anonymous], 2013, PROC 15 EUR C POWER

[3] Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs [J].

Chen, Cheng ;

Labrousse, Denis ;

Lefebvre, Stephane ;

Petit, Mickael ;

Buttay, Cyril ;

Morel, Herve .

MICROELECTRONICS RELIABILITY, 2015, 55 (9-10) :1708-1713

[4]

Chen Z, 2012, 2012 15TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (EPE/PEMC)

[5]

Dusmez S., 2017, Energy Conversion Congress and Exposition (ECCE), 2016 IEEE, P1

[6] Remaining Useful Lifetime Estimation for Power MOSFETs Under Thermal Stress With RANSAC Outlier Removal [J].

Dusmez, Serkan ;

Heydarzadeh, Mehrdad ;

Nourani, Mehrdad ;

Akin, Bilal .

IEEE TRANSACTIONS ON INDUSTRIAL INFORMATICS, 2017, 13 (03) :1271-1279

[7] Remaining Useful Lifetime Estimation for Thermally Stressed Power MOSFETs Based on ON-State Resistance Variation [J].

Dusmez, Serkan ;

Duran, Hamit ;

Akin, Bilal .

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2016, 52 (03) :2554-2563

[8]

Dusmez S, 2016, APPL POWER ELECT CO, P2108, DOI 10.1109/APEC.2016.7468158

[9]

Dusmez S, 2015, 2015 IEEE INTERNATIONAL ELECTRIC MACHINES & DRIVES CONFERENCE (IEMDC), P1352, DOI 10.1109/IEMDC.2015.7409238

[10]

Ibrahim A., 2016, PES Innovative Smart Grid Technologies Conference Europe (ISGT-Europe), 2016 IEEE, P1, DOI DOI 10.1109/ICSENS.2016.7808742

← 1 2 3 →