Studies of N-Doped p-ZnO Layers Grown on c-Sapphire by Radical Source Molecular Beam Epitaxy

被引：7

作者：

Ivanov, S. V. ^{[1
]}

El-Shafr, A. ^{[1
]}

Al-Suleiman, M. ^{[1
]}

Bakin, A. ^{[1
]}

Waag, A. ^{[1
]}

Lyublinskaya, O. G. ^{[2
]}

Shmidt, N. M. ^{[2
]}

Listoshin, S. B. ^{[2
]}

Kyutt, R. N. ^{[2
]}

Ratnikov, V. V. ^{[2
]}

Terentyev, A. Ya. ^{[2
]}

Ber, B. Ya. ^{[2
]}

Komissarova, T. A. ^{[3
]}

Ryabova, L. I. ^{[3
]}

Khokhlov, D. R. ^{[3
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Semicond Technol, D-38106 Braunschweig, Germany

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

[3] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 05期

关键词：

Molecular beam epitaxy; Plasma activated oxygen; Nitrogen; ZnO layers; p-doping;

D O I：

10.3938/jkps.53.3016

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the fabrication of p-type ZnO:N layers using radical-source molecular beam epitaxy and post-growth annealing of the samples. Plasma-activated oxygen and nitrogen fluxes are supplied via a single plasma cell. The combination of low growth temperature (350 - 400 degrees C), slightly O-rich conditions, and post-growth annealing in the range of 650 - 800 degrees C results in efficient nitrogen p-doping with Hall hole concentration 3 x 10(17) cm(-3). The details of the structural and the electrical characterizations of the films are discussed.

引用

页码：3016 / 3020

页数：5

共 50 条

[41] n-GaAlAs on p-GaAs heterostructure solar cells grown by molecular beam epitaxy [J].

Thainoi, Supachok ;

Suraprapapich, Suwaree ;

Sawadsaringkarn, Montri ;

Panyakeow, Somsak .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (18-19) :2989-2994

[42] Influence of Be on N composition in Be-doped InGaAsN grown by RF plasma-assisted molecular beam epitaxy [J].

Xie, SY ;

Yoon, SF ;

Wang, SZ ;

Sun, ZZ ;

Chen, P ;

Chua, ST .

JOURNAL OF CRYSTAL GROWTH, 2004, 260 (3-4) :366-371

[43] Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular beam epitaxy [J].

N. Xiang ;

A. Tukiainen ;

M. Pessa ;

J. Dekker ;

J. Likonen .

Journal of Materials Science: Materials in Electronics, 2002, 13 :549-552

[44] X-ray studies of As-doped GaN grown by plasma-assisted molecular beam epitaxy [J].

Li, T ;

Staddon, CR ;

Novikov, SV ;

Fewster, PF ;

Widdowson, A ;

Andrew, NL ;

Kidd, P ;

Harrison, I ;

Winser, A ;

Liao, Y ;

Foxon, CT .

JOURNAL OF CRYSTAL GROWTH, 2002, 235 (1-4) :103-110

[45] Growth Temperature Effects in Nanoscale-Thick GaTe Films on c-Sapphire Substrate by Molecular Beam Epitaxy: Implications for High-Performance Optoelectronic Devices [J].

Kumar, Nand ;

Kandar, Santanu ;

Bhatt, Kamlesh ;

Kapoor, Ashok ;

Singh, Rajendra .

ACS APPLIED NANO MATERIALS, 2024, 7 (09) :10870-10878

[46] Optical properties and structural characteristics of ZnO thin films grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy [J].

Pan, Xinhua ;

Ding, Ping ;

He, Haiping ;

Huang, Jingyun ;

Lu, Bin ;

Zhang, Honghai ;

Ye, Zhizhen .

OPTICS COMMUNICATIONS, 2012, 285 (21-22) :4431-4434

[47] Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy [J].

Ma, Ta-Chun ;

Lin, Yan-Ting ;

Lin, Hao-Hsiung .

JOURNAL OF CRYSTAL GROWTH, 2011, 318 (01) :363-366

[48] Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy [J].

Xia, Y. ;

Brault, J. ;

Vennegues, P. ;

Nemoz, M. ;

Teisseire, M. ;

Leroux, M. ;

Chauveau, J. -M. .

JOURNAL OF CRYSTAL GROWTH, 2014, 388 :35-41

[49] Electrical Properties of Mg-Doped AlxGa1-xAs Epitaxial Layers Grown by Using Molecular Beam Epitaxy [J].

Kim, Min Su ;

Kim, Do Yeob ;

Kim, Tae Hoon ;

Kim, Ghun Sik ;

Choi, Hymn Young ;

Cho, Min Young ;

Jeon, Su Min ;

Ryu, H. H. ;

Park, W. W. ;

Leem, J. Y. ;

Kim, Jong Su ;

Kim, Jin Soo ;

Lee, D. Y. ;

Son, J. S. .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (02) :673-677

[50] Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) template [J].

Chen, Cheng-Yu ;

Siao, Li-Han ;

Chyi, Jen-Inn ;

Chao, Chih-Kang ;

Wu, Chih-Hung .

GALLIUM NITRIDE MATERIALS AND DEVICES VI, 2011, 7939

← 1 2 3 4 5 →