Studies of N-Doped p-ZnO Layers Grown on c-Sapphire by Radical Source Molecular Beam Epitaxy

被引：7

作者：

Ivanov, S. V. ^{[1
]}

El-Shafr, A. ^{[1
]}

Al-Suleiman, M. ^{[1
]}

Bakin, A. ^{[1
]}

Waag, A. ^{[1
]}

Lyublinskaya, O. G. ^{[2
]}

Shmidt, N. M. ^{[2
]}

Listoshin, S. B. ^{[2
]}

Kyutt, R. N. ^{[2
]}

Ratnikov, V. V. ^{[2
]}

Terentyev, A. Ya. ^{[2
]}

Ber, B. Ya. ^{[2
]}

Komissarova, T. A. ^{[3
]}

Ryabova, L. I. ^{[3
]}

Khokhlov, D. R. ^{[3
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Semicond Technol, D-38106 Braunschweig, Germany

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

[3] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 05期

关键词：

Molecular beam epitaxy; Plasma activated oxygen; Nitrogen; ZnO layers; p-doping;

D O I：

10.3938/jkps.53.3016

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the fabrication of p-type ZnO:N layers using radical-source molecular beam epitaxy and post-growth annealing of the samples. Plasma-activated oxygen and nitrogen fluxes are supplied via a single plasma cell. The combination of low growth temperature (350 - 400 degrees C), slightly O-rich conditions, and post-growth annealing in the range of 650 - 800 degrees C results in efficient nitrogen p-doping with Hall hole concentration 3 x 10(17) cm(-3). The details of the structural and the electrical characterizations of the films are discussed.

引用

页码：3016 / 3020

页数：5

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