Mechanical responses of two-dimensional MoTe2; pristine 2H, 1T and 1T′ and 1T′/2H heterostructure

被引:44
作者
Mortazavi, Bohayra [1 ]
Berdiyorov, Golibjon R. [2 ]
Makaremi, Meysam [3 ]
Rabczuk, Timon [4 ]
机构
[1] Bauhaus Univ Weimar, Inst Struct Mech, Marienstr 15, D-99423 Weimar, Germany
[2] Hamad Bin Khalifa Univ, Qatar Environm & Energy Res Inst, Qatar Fdn, Doha, Qatar
[3] Univ Toronto, Dept Mat Sci & Engn, 184 Coll St,Suite 140, Toronto, ON M5S 3E4, Canada
[4] Tongji Univ, Dept Geotech Engn, Coll Civil Engn, Shanghai, Peoples R China
基金
欧洲研究理事会;
关键词
MoTe2; 2D materials; Mechanical; Heterostructure; First-principles modeling; TOTAL-ENERGY CALCULATIONS; PHASE-TRANSITION; LAYER MOTE2; STRAIN; MONOLAYER; STRENGTH; BORON; TEMPERATURE;
D O I
10.1016/j.eml.2018.01.005
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Transition metal dichalcogenides (TMD) are currently among the most interesting two-dimensional (2D) materials due to their outstanding properties. MoTe2 involves attractive polymorphic TMD crystals which can exist in three different 2D atomic lattices of 2H, 1T and 1T', with diverse properties, like semiconducting and metallic electronic characters. Using the polymorphic heteroepitaxy, most recently coplanar semiconductor/metal (2H/1T') few-layer MoTe2 heterostructures were experimentally synthesized, highly promising to build circuit components for next generation nanoelectronics. Motivated by the recent experimental advances, we conducted first-principles calculations to explore the mechanical properties of single-layer MoTe2 structures. We first studied the mechanical responses of pristine and single-layer 2H-, 1T- and 1T'-MoTe2. In these cases we particularly analyzed the possibility of engineering of the electronic properties of these attractive 2D structures using the biaxial or uniaxial tensile loadings. Finally, the mechanical-failure responses of 1T'/2H-MoTe2 heterostructure were explored, which confirms the remarkable strength of this novel 2D system. (c) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码:65 / 72
页数:8
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