Proof of Ge-interfacing concepts for metal/high-k/Ge CMOS Ge-intimate material selection and interface conscious process flow

被引：80

作者：

Takahashi, T. ^{[1
]}

Nishimura, T. ^{[1
]}

Chen, L. ^{[1
]}

Sakata, S. ^{[1
]}

Kita, K. ^{[1
]}

Toriumi, A. ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GeO(2)/Ge and high-k(LaYO(3))/Ge interfaces have been significantly improved by suppressing GeO desorption and treating Ge surface with radical nitrogen. With the Ge-intimate material selection and interface conscious process flow, we have achieved that the peak hole mobility of PtGe source/drain p-MOSFET is about 370 cm(2)/Vsec in FUSI/GeO(2)/Ge. Furthermore, metal/n-Ge ohmic characteristic has been achieved by inserting ultra-thin GeO(x) layer between metal and Ge, which enables us to operate metal source/drain Ge n-MOSFETs for the first time.

引用

页码：697 / 700

页数：4