Relaxation of the normal electrical resistivity induced by high-pressure in strongly underdoped YBa2Cu3O7-δ single crystals

We investigate the relaxation of the normal electrical resistivity, induced by high-pressure in YBa2Cu3O6.45 single crystals. It is determined that the pressure affects to the phase composition of the sample. Under pressure phases with different (but similar) critical temperatures form. It is determined that the application-removal pressure process is completely reversible. Above T-c. the temperature dependence of the resistivity in the layers' plane at different hydrostatic pressures can be approximated with high accuracy with the scattering of electrons by phonons model. With increasing pressure, the residual resistance is reduced and the contribution of intraband s-s scattering increases. Additionally, the role of the interband s-d scattering and the Debye temperature is enhanced. (C) 2012 Elsevier B.V. All rights reserved.