A synapse memristor model with forgetting effect

被引：68

作者：

Chen, Ling ^{[1
]}

Li, Chuandong ^{[1
]}

Huang, Tingwen ^{[3
]}

Chen, Yiran ^{[4
]}

Wen, Shiping ^{[2
]}

Qi, Jiangtao ^{[1
]}

机构：

[1] Chongqing Univ, Coll Comp, Chongqing 400044, Peoples R China

[2] Huazhong Univ Sci & Technol, Sch Automat, Wuhan 430074, Peoples R China

[3] Texas A&M Univ Qatar, Doha 5825, Qatar

[4] Univ Pittsburgh, Pittsburgh, PA 15261 USA

来源：

PHYSICS LETTERS A | 2013年 / 377卷 / 45-48期

基金：

美国国家科学基金会;

关键词：

Memristor; Ion diffusion; Forgetting; Long term memory;

D O I：

10.1016/j.physleta.2013.10.024

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this Letter we improved the ion diffusion term proposed in literature [13] and redesigned the previous model as a dynamical model with two more internal state variables 'forgetting rate' and 'retention' besides the original variable 'conductance'. The new model can not only describe the basic memory ability of memristor but also be able to capture the new finding forgetting behavior in memristor. And different from the previous model, the transition from short term memory to long term memory is also defined by the new model. Besides, the new model is better matched with the physical memristor (Pd/WOx/W) than the previous one. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：3260 / 3265

页数：6

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