A synapse memristor model with forgetting effect

被引：66

作者：

Chen, Ling ^{[1
]}

Li, Chuandong ^{[1
]}

Huang, Tingwen ^{[3
]}

Chen, Yiran ^{[4
]}

Wen, Shiping ^{[2
]}

Qi, Jiangtao ^{[1
]}

机构：

[1] Chongqing Univ, Coll Comp, Chongqing 400044, Peoples R China

[2] Huazhong Univ Sci & Technol, Sch Automat, Wuhan 430074, Peoples R China

[3] Texas A&M Univ Qatar, Doha 5825, Qatar

[4] Univ Pittsburgh, Pittsburgh, PA 15261 USA

来源：

PHYSICS LETTERS A | 2013年 / 377卷 / 45-48期

基金：

美国国家科学基金会;

关键词：

Memristor; Ion diffusion; Forgetting; Long term memory;

D O I：

10.1016/j.physleta.2013.10.024

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this Letter we improved the ion diffusion term proposed in literature [13] and redesigned the previous model as a dynamical model with two more internal state variables 'forgetting rate' and 'retention' besides the original variable 'conductance'. The new model can not only describe the basic memory ability of memristor but also be able to capture the new finding forgetting behavior in memristor. And different from the previous model, the transition from short term memory to long term memory is also defined by the new model. Besides, the new model is better matched with the physical memristor (Pd/WOx/W) than the previous one. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：3260 / 3265

页数：6

共 16 条

[1] Biolek Z, 2009, RADIOENGINEERING, V18, P210
[2] Hebbian Learning in Spiking Neural Networks With Nanocrystalline Silicon TFTs and Memristive Synapses
Cantley, Kurtis D.
Subramaniam, Anand
Stiegler, Harvey J.
Chapman, Richard A.
Vogel, Eric M.
[J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2011, 10 (05) : 1066 - 1073
[3] Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
Chang, Ting
Jo, Sung-Hyun
Lu, Wei
[J]. ACS NANO, 2011, 5 (09) : 7669 - 7676
[4] Synaptic behaviors and modeling of a metal oxide memristive device
Chang, Ting
Jo, Sung-Hyun
Kim, Kuk-Hwan
Sheridan, Patrick
Gaba, Siddharth
Lu, Wei
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 102 (04): : 857 - 863
[5] Associate learning and correcting in a memristive neural network
Chen, Ling
Li, Chuandong
Wang, Xin
Duan, Shukai
[J]. NEURAL COMPUTING & APPLICATIONS, 2013, 22 (06) : 1071 - 1076
[6] MEMRISTOR - MISSING CIRCUIT ELEMENT
CHUA, LO
[J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1971, CT18 (05): : 507 - +
[7] A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications
Kim, Kuk-Hwan
Gaba, Siddharth
Wheeler, Dana
Cruz-Albrecht, Jose M.
Hussain, Tahir
Srinivasa, Narayan
Lu, Wei
[J]. NANO LETTERS, 2012, 12 (01) : 389 - 395
[8] TEAM: ThrEshold Adaptive Memristor Model
Kvatinsky, Shahar
Friedman, Eby G.
Kolodny, Avinoam
Weiser, Uri C.
[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2013, 60 (01) : 211 - 221
[9] Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiOx/Pt cell
Lee, Shin Buhm
Chang, Seo Hyoung
Yoo, Hyang Keun
Yoon, Moon Jee
Yang, Sang Mo
Kang, Bo Soo
[J]. CURRENT APPLIED PHYSICS, 2012, 12 (06) : 1515 - 1517
[10] Experimental demonstration of associative memory with memristive neural networks
Pershin, Yuriy V.
Di Ventra, Massimiliano
[J]. NEURAL NETWORKS, 2010, 23 (07) : 881 - 886

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