Polaron relaxation and hopping conductivity in LaMn1-xFexO3

被引:67
作者
Karmakar, A. [1 ]
Majumdar, S.
Giri, S.
机构
[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, India
[2] Indian Assoc Cultivat Sci, Ctr Adv Mat, Kolkata 700032, India
关键词
Anderson model; carrier density; crystal structure; dielectric relaxation; electrical resistivity; hopping conduction; lanthanum compounds; manganese compounds; polarons; MIXED-VALENCE MANGANITES; TRANSPORT-PROPERTIES; NEUTRON-DIFFRACTION; MAGNETIC-PROPERTIES; AC CONDUCTIVITY; FE SUBSTITUTION; DOUBLE EXCHANGE; LOCALIZATION; LA1-XSRXMNO3; LAMNO3;
D O I
10.1103/PhysRevB.79.094406
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
dc and ac transport properties as well as electric modulus spectra have been investigated for the samples LaMn1-xFexO3 with compositions 0 <= x <= 1.0. The bulk dc resistivity shows a temperature variation consistent with the variable range hopping mechanism at low temperature and Arrhenius mechanism at high temperatures. The ac conductivity has been found to follow a power-law behavior at a limited temperature and frequency region where Anderson localization plays a significant role in the transport mechanism for all the compositions. At low temperatures large dc resistivity and dielectric relaxation behavior for all the compositions are consistent with the polaronic nature of the charge carriers. Scaling of the modulus spectra shows that the charge transport dynamics is independent of temperature for a particular composition but depends strongly on different compositions possibly due to different charge carrier concentrations and structural properties.
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页数:7
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