Combined Machine Learning Techniques For Characteristics Classification and Threshold Voltage Extraction of Transistors

被引:2
作者
Kocak, Husnu Murat [1 ]
Mitard, Jerome [2 ]
Naskali, Ahmet Teoman [1 ]
机构
[1] Galatasaray Univ, Dept Comp Engn, Istanbul, Turkey
[2] IMEC, Compute & Memory Dept, Leuven, Belgium
来源
2022 IEEE 34TH INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS) | 2022年
关键词
Semiconductors; Transistor defect; Machine Learning; Convolutional Neural Network; Threshold Voltage Extraction; DEFECT PATTERNS;
D O I
10.1109/ICMTS50340.2022.9898251
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present an autonomous 2-step Machine Learning based approach for characteristics classification and key parameter extraction for transistors. The first step is a multi-model ensemble, composed of Machine Learning, more particularly a Convolutional Neural Network (CNN) approach to enable fast classification of transistor characteristics. The second step is another CNN model to extract the threshold voltage parameters that enable us to measure the performance of ultra-scaled MOSFETs. Our CNN-based classifier has demonstrated accuracy above 90% with an execution time significantly faster than that of the current human expert-based methods while our Vth extractor has demonstrated less than 8mV error rate in the filtered dataset that comes from the classifier. The proposed techniques which do not incorporate hard-coded domain knowledge, and are also tested with input data coming from 16nm-node FinFET technology and evaluated by a consensus of experts to prove the universality of the models using the same parameters.
引用
收藏
页码:21 / 29
页数:9
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