Transformation of the Fermi surface and anisotropy phenomena in 2D hole gas at GaAs/AlxGa1-xAs heterointerface under uniaxial stress

被引：2

作者：

Minina, NY ^{[1
]}

Kolokolov, KI

Beneslavski, SD

Bogdanov, EV

Polyanskiy, AV

Savin, AM

Hansen, OP

机构：

[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119899, Russia

[2] NASA, Ames Res Ctr, Ctr Nanotechnol, Moffett Field, CA 94035 USA

[3] Helsinki Univ Technol, Low Temp Lab, FIN-02015 Espoo, Finland

[4] Niels Bohr Inst, Orsted Lab, DK-2100 Copenhagen, Denmark

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 22卷 / 1-3期

关键词：

heterostructure; band structure; electronic transport; optical properties; uniaxial;

D O I：

10.1016/j.physe.2003.12.024

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

By numerical calculation the Fermi surface of two-dimensional (2D) holes at p-GaAs/AlxGal-x As heterointerface is found to become strongly anisotropic under the application of in-plane uniaxial compression. This uniaxial stress-induced anisotropy of the energy spectrum reveals in more that two times increase of 2D hole mobility anisotropy (at uniaxial compression about 5 kbar), that is experimentally detected in such heterostructures. It leads also to considerable anisotropy of far-infrared absorption spectrum; absorption of light with polarization perpendicular to the direction of compression is smaller that the absorption of light with polarization parallel to the direction of compression. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：373 / 376

页数：4

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