Calibration-Kit Design for Millimeter-Wave Silicon Integrated Circuits

被引:60
作者
Williams, Dylan F. [1 ]
Corson, Phillip [2 ]
Sharma, Jahnavi [3 ]
Krishnaswamy, Harish [3 ]
Tai, Wei [4 ]
George, Zacharias [4 ]
Ricketts, David [4 ]
Watson, Paul [5 ]
Dacquay, Eric [6 ]
Voinigescu, Sorin P. [6 ]
机构
[1] NIST, Boulder, CO 80305 USA
[2] IBM Semicond Res & Dev Ctr, Essex Jct, VT 05452 USA
[3] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
[4] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
[5] Air Force Res Lab, Wright Patterson AFB, OH 45433 USA
[6] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
关键词
Calibration; measurement; millimeter wave; scattering parameters; silicon; transistor; uncertainty; vector network analyzer; NETWORK-ANALYZER CALIBRATION; ALGORITHM;
D O I
10.1109/TMTT.2013.2265685
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We study and present design guidelines for thru-reflect-line vector-network-analyzer calibration kits used for characterizing circuits and transistors fabricated on silicon integrated circuits at millimeter-wave frequencies. We compare contact-pad designs and develop fixed-fill contacts that achieve both repeatable and low contact-pad capacitances. We develop a fill-free and mesh-free transmission line structure for the calibration kit and compare it to similar transmission lines with meshed ground plane. We also develop a gold plating process that greatly improves contact repeatability, permitting the use of redundant multiline calibrations. This in turn simplifies the development of an error analysis. Finally, we apply the technique to state-of-the-art transistor characterization, and present measured results with uncertainties.
引用
收藏
页码:2685 / 2694
页数:10
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