Space-charge-limited post transit currents spectroscopy in poly(methylphenylsilylene)

被引:0
|
作者
Schauer, F [1 ]
Handlir, R [1 ]
Nespureka, S [1 ]
机构
[1] ACAD SCI CZECH REPUBL,INST MACROMOL CHEM,CR-16206 PRAGUE 6,CZECH REPUBLIC
来源
ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS | 1997年 / 7卷 / 02期
关键词
silicon backbone polymers; transport properties; transient photoconductivity; light generation efficiency;
D O I
10.1002/(SICI)1099-0712(199703)7:2<61::AID-AMO284>3.3.CO;2-J
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
Transient space-charge-limited currents (T-SCLCs) were used as a method for examining drift mobility, recombination and transport mechanisms for a typical poly(silylene), poly(methylphenylsilylene) (PMPSi). It was found that T-SCLCs present a unique possibility for injecting constant charge into a material with strong dependence of the generation efficiency on the electric field strength. This charge is given by space charge limitations and is thus independent of the transport properties of the material, The post-transit T-SCLC hole emission signals from deep traps have been measured using post-transit T-SCLCs. A density-of-electron-states distribution for deep trapping hole states with a tail-like exponential and a Gaussian distribution centred at 0.55 eV were found. (C) 1997 by John Wiley & Sons, Ltd.
引用
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页码:61 / 65
页数:5
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