Thermal Annealing Effects on Electrical Properties of Ir/Ru Schottky Contacts on n-InGaN

被引：0

作者：

Padma, R. ^{[1
]}

Lakshmi, B. Prasanna ^{[1
]}

Reddy, V. Rajagopal ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Semicond Devices Lab, Tirupati 517502, Andhra Pradesh, India

来源：

PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS & MATERIAL SCIENCE (RAM 2013) | 2013年 / 1536卷

关键词：

Schottky barrier height; ideality factor; series resistance; interface state density;

D O I：

10.1063/1.4810304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effects of annealing on electrical properties of Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V) measurements. The Schottky barrier height (SBH) is found to be 0.61 eV for as-deposited Ir/Ru Schottky contacts. For the contacts annealed at 200 and 300 degrees C, the SBH slightly increases and then slightly decreases after annealing at 400 degrees C and 500 degrees C. The series resistance (R-S) can be determined using Cheung's method. Besides, the energy distributions of interface state densities are determined by using the Terman's method. It is noted that the electrical properties of Ir/Ru Schottky contacts are improved after annealing at 300 degrees C. Based on these results, it is clear that Ir/Ru Schottky contact is an attractive metallization scheme for the fabrication of InGaN-based device applications.

引用

页码：469 / 470

页数：2

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