An improved model for extraction of strongly spatial dependent lifetimes with the AC lifetime profiling technique

被引：21

作者：

Daliento, S ^{[1
]}

Sanseverino, A ^{[1
]}

Spirito, P ^{[1
]}

机构：

[1] Univ Naples Federico II, Dept Elect, I-80125 Naples, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 08期

关键词：

charge carrier lifetime;

D O I：

10.1109/16.777175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief, we present an improvement of the extraction method for the at lifetime profiling technique using a more accurate evaluation of the abscissa x where the lifetime is measured. By this model, a very good extraction of strongly variable lifetime profiles is obtained.

引用

页码：1808 / 1810

页数：3

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