Pressure effect on spin-orbit interaction in a spherical quantum antidot

被引：5

作者：

Khordad, R. ^{[1
]}

Fathizadeh, N. ^{[1
]}

机构：

[1] Univ Yasuj, Dept Phys, Coll Sci, Yasuj 75914353, Iran

来源：

INDIAN JOURNAL OF PHYSICS | 2013年 / 87卷 / 03期

关键词：

Spin-orbit interaction; Antidot; Pressure; OPTICAL-PROPERTIES; BAND-STRUCTURE; HYDROGENIC IMPURITY; STATES; GAAS; SPINTRONICS; TEMPERATURE; DEPENDENCE; SILICON; RINGS;

D O I：

10.1007/s12648-012-0222-z

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In the present work, the Schrodinger equation is analytically solved for a GaAs/Ga1-x Al (x) As spherical quantum antidot with a hydrogenic donor impurity at the center. Then, the effect of pressure on the spin-orbit interaction and binding energy of the quantum antidot is studied within the effective mass approximation. It is observed that (i) the binding energy increases with increasing pressure, (ii) the level splitting increases by increasing pressure and (iii) the splitting decreases with increasing antidot size.

引用

页码：229 / 234

页数：6