Combined Effect of Temperature Induced Strain and Oxygen Vacancy on Metal-Insulator Transition of VO2Colloidal Particles

被引:65
作者
Gurunatha, Kargal L. [1 ]
Sathasivam, Sanjayan [2 ]
Li, Jianwei [2 ]
Portnoi, Mark [1 ]
Parkin, Ivan P. [2 ]
Papakonstantinou, Ioannis [1 ]
机构
[1] UCL, Dept Elect & Elect Engn, Photon Innovat Lab, Torrington Pl, London WC1E 7JE, England
[2] UCL, Dept Chem, 20 Gordon St, London WC1H 0AJ, England
基金
欧盟地平线“2020”; 英国工程与自然科学研究理事会; 欧洲研究理事会;
关键词
metal-insulator transitions; oxygen vacancies; structural phase transitions; temperature induced strain; vanadium dioxide; PHASE-TRANSITION; VANADIUM DIOXIDE; VO2; NANOPARTICLES; TIO2; 001; TRANSFORMATION; MECHANISM; XPS; DYNAMICS; PEIERLS; GROWTH;
D O I
10.1002/adfm.202005311
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Vanadium dioxide (VO2) is a promising material in the development of thermal and electrically sensitive devices due to its first order reversible metal-insulator transition (MIT) at 68 degrees C. Such high MIT temperature (T-C) largely restricts its widespread application which could be enabled if a straightforward tuning mechanism were present. Here this need is addressed through a facile approach that uses the combined effects of temperature induced strain and oxygen vacancies in bulk VO(2)colloidal particles. A simple thermal annealing process under varying vacuum is used to achieve phase transformation of metastable VO2(A) into VO2(M2), (M2+M3), (M1) and higher valence V(6)O(13)phases. During this process, distinct multiple phase transitions including increased as well as suppressedT(C)are observed with respect to the annealing temperature and varied amount of oxygen vacancies respectively. The latent heat of phase transition is also significantly improved upon thermal annealing by increasing the crystallinity of the samples. This work not only offers a facile route for selective phase transformation of VO(2)as well as to manipulate the phase transition temperature, but also contributes significantly to the understanding of the role played by oxygen vacancies and temperature induced stress on MIT which is essential for VO(2)based applications.
引用
收藏
页数:9
相关论文
共 70 条
[1]   Control of the metal-insulator transition in vanadium dioxide by modifying orbital occupancy [J].
Aetukuri, Nagaphani B. ;
Gray, Alexander X. ;
Drouard, Marc ;
Cossale, Matteo ;
Gao, Li ;
Reid, Alexander H. ;
Kukreja, Roopali ;
Ohldag, Hendrik ;
Jenkins, Catherine A. ;
Arenholz, Elke ;
Roche, Kevin P. ;
Duerr, Hermann A. ;
Samant, Mahesh G. ;
Parkin, Stuart S. P. .
NATURE PHYSICS, 2013, 9 (10) :661-666
[2]   Strain and temperature dependence of the insulating phases of VO2 near the metal-insulator transition [J].
Atkin, Joanna M. ;
Berweger, Samuel ;
Chavez, Emily K. ;
Raschke, Markus B. ;
Cao, Jinbo ;
Fan, Wen ;
Wu, Junqiao .
PHYSICAL REVIEW B, 2012, 85 (02)
[3]   The role of 1-D finite size Heisenberg chains in increasing the metal to insulator transition temperature in hole rich VO2 [J].
Basu, Raktima ;
Sardar, Manas ;
Bera, Santanu ;
Magudapathy, P. ;
Dhara, Sandip .
NANOSCALE, 2017, 9 (19) :6537-6544
[4]  
BERGLUND CN, 1969, PHYS REV, V185, P1022, DOI 10.1103/PhysRev.185.1022
[5]   Resolving surface chemical states in XPS analysis of first row transition metals, oxides and hydroxides: Sc, Ti, V, Cu and Zn [J].
Biesinger, Mark C. ;
Lau, Leo W. M. ;
Gerson, Andrea R. ;
Smart, Roger St. C. .
APPLIED SURFACE SCIENCE, 2010, 257 (03) :887-898
[6]  
Bloch R., 1974, MAT RES B, V1, P11
[7]   Extended Mapping and Exploration of the Vanadium Dioxide Stress-Temperature Phase Diagram [J].
Cao, J. ;
Gu, Y. ;
Fan, W. ;
Chen, L. Q. ;
Ogletree, D. F. ;
Chen, K. ;
Tamura, N. ;
Kunz, M. ;
Barrett, C. ;
Seidel, J. ;
Wu, J. .
NANO LETTERS, 2010, 10 (07) :2667-2673
[8]  
Cao J, 2009, NAT NANOTECHNOL, V4, P732, DOI [10.1038/nnano.2009.266, 10.1038/NNANO.2009.266]
[9]  
Chamberland B. L., 1973, Journal of Solid State Chemistry, V7, P377, DOI 10.1016/0022-4596(73)90166-7
[10]   Pressure-Temperature Phase Diagram of Vanadium Dioxide [J].
Chen, Yabin ;
Zhang, Shuai ;
Ke, Feng ;
Ko, Changhyun ;
Lee, Sangwook ;
Liu, Kai ;
Chen, Bin ;
Ager, Joel W. ;
Jeanloz, Raymond ;
Eyert, Volker ;
Wu, Junqiao .
NANO LETTERS, 2017, 17 (04) :2512-2516