Growth and structural characterization of GaAsBi/GaAs multiple quantum wells

被引：18

作者：

Richards, Robert D. ^{[1
]}

Bastiman, Faebian ^{[1
]}

Walker, David ^{[2
]}

Beanland, Richard ^{[2
]}

David, John P. R. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2015年 / 30卷 / 09期

关键词：

molecular beam epitaxy; GaAsBi; multiple quantum wells; transmission electron microscopy; x-ray diffraction;

D O I：

10.1088/0268-1242/30/9/094013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAsBi/GaAs multiple quantum well (MQW) p-i-n diodes are grown by molecular beam epitaxy. Transmission electron microscope images of the diodes show good agreement between the intended and measured MQW periods, but poor agreement between the intended and measured GaAsBi quantum well thicknesses. This is likely due to the incorporation of Bi from a physisorbed surface layer that takes a finite time to accumulate during growth. The diodes with more than 40 wells show dislocations that indicate strain relaxation. This is supported by x-ray diffraction analysis, which also suggests that the i-region of the 54 well diode is tilted with respect to the substrate.

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