Design and Optimization of LNA Amplifier Based on HEMT GaN for X-Band Wireless-Communication and IoT Applications

Recently, the technology has evolved towards artificial intelligence world which include IoT (Internet of Things) and IoE (Internet of Everything) as communication between machines or between devices is possible. The development of these systems today requires electronic components capable of generating higher power and frequency levels, which is why new technologies have emerged to meet these needs, GaN HEMT technology. It has attracted a lot of attention for microwave power and high temperature applications. More recently, this technology has become a great interest to the international scientific community for the realization of low noise amplifiers which are the main components of wireless communication systems. In this paper, we modeled an LNA amplifier based on HEMT GaN transistors. This amplifier is unconditionally stable in the X-band (8-12) GHz with a gain of 38 dB, a noise factor does not exceed 2.4 dB and lower input and output reflection coefficients (S11, S22). at -14 dB and - 8 dB respectively. The designed amplifier can be integrated into radar systems, space communications systems and civilian-military radiolocation systems.