Identification of an isolated arsenic antisite defect in GaAsBi

被引：18

作者：

Dagnelund, D. ^{[1
]}

Puustinen, J. ^{[2
]}

Guina, M. ^{[2
]}

Chen, W. M. ^{[1
]}

Buyanova, I. A. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

[2] Tampere Univ Technol, Optoelect Res Ctr, FI-33101 Tampere, Finland

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 05期

基金：

瑞典研究理事会;

关键词：

MOLECULAR-BEAM EPITAXY; ELECTRON-PARAMAGNETIC-RESONANCE; DETECTED MAGNETIC-RESONANCE; TEMPERATURE-GROWN GAAS; BAND-GAP; SEMICONDUCTOR; GAAS1-XBIX; ALLOY;

D O I：

10.1063/1.4864644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optically detected magnetic resonance and photoluminescence spectroscopy are employed to study grown-in defects in GaAs0.985Bi0.015 epilayers grown by molecular beam epitaxy. The dominant paramagnetic defect is identified as an isolated arsenic antisite, As-Ga, with an electron g-factor of 2.03 +/- 0.01 and an isotropic hyperfine interaction constant A (900 +/- 620) x 10(-4) cm(-1). The defect is found to be preferably incorporated during the growth at the lowest growth temperature of 270 degrees C, but its formation can be suppressed upon increasing growth temperature to 315 degrees C. The As-Ga concentration is also reduced after post-growth rapid thermal annealing at 600 degrees C. (C) 2014 AIP Publishing LLC.

引用

页数：4

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