Numerical simulation of the transport properties of indium antimonide

被引：7

作者：

Orlov, V. G. ^{[1
,2
]}

Sergeev, G. S. ^{[1
]}

机构：

[1] Natl Res Ctr Kurchatov Inst, Moscow 123182, Russia

[2] State Univ, Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia

来源：

PHYSICS OF THE SOLID STATE | 2013年 / 55卷 / 11期

关键词：

ELASTIC ELECTRON-SCATTERING; MONTE-CARLO-SIMULATION; BOLTZMANN-EQUATION; BAND-STRUCTURE; SEMICONDUCTOR-DEVICES; GAP SEMICONDUCTORS; INSB; MOBILITY; TEMPERATURE; FIGURE;

D O I：

10.1134/S1063783413110188

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A systematic investigation of the behavior of the transport coefficients of n-InSb over wide ranges of temperatures and concentrations of dopant atoms has been performed using the numerical solution of the Boltzmann transport equation. The thermoelectric characteristics of indium antimonide have been analyzed. The influence of different mechanisms of scattering of charge carriers on the transport coefficients and efficiency of thermoelectric energy conversion has been considered. The nature of the specific features of the temperature and concentration dependence of the transport and thermoelectric properties of n-InSb has been revealed.

引用

页码：2215 / 2222

页数：8

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