Preferred orientations in polycrystalline SnO2 films grown by atmospheric pressure chemical vapor deposition

被引:85
作者
Korotkov, RY [1 ]
Ricou, P [1 ]
Farran, AJE [1 ]
机构
[1] ATOFINA Chem, King Of Prussia, PA 19406 USA
关键词
polycrystalline; SnO2;
D O I
10.1016/j.tsf.2005.07.248
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of film thickness, tin precursor nature, flow rate, and nucleation layers on the preferred growth direction of polycrystalline SnO2 films deposited on soda time glass substrates were studied. By analyzing tin oxide layers deposited at different flow rates with X-ray diffraction, it was found that the predominate mechanism of SnO2 chemical vapor deposition was oriented overgrowth when monobutyltintrichloride and dibutyltindiacetate were used as a tin precursors. In the same manner, the deposition of SnO2 from tetrabutyltin and phenyltintrichloride was found to be governed by homogeneous nucleation. Atomic force microscopy, X-ray studies and application of a periodic bond chain theory indicated that polycrystalline SnO2 film surfaces deposited with monobutyltin-trichloride and dibutyltin-diacetate were formed by pyramidal based grains (200 x 300 nm) with (111) facets having (200) as a predominated growth direction. Tetrabutyltin and phenylbutyltin-tiichloride deposited SnO2 films had (211) and (301) as preferred orientations formed by (101) contact twins. A nucleation layer approach was discussed in relation to improving the texture of the polycrystalline SnO2. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:79 / 87
页数:9
相关论文
共 20 条
[1]   THICKNESS DEPENDENCE OF TRANSPORT-PROPERTIES OF DOPED POLYCRYSTALLINE TIN OXIDE-FILMS [J].
BELANGER, D ;
DODELET, JP ;
LOMBOS, BA ;
DICKSON, JI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) :1398-1405
[2]   TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].
CHOPRA, KL ;
MAJOR, S ;
PANDYA, DK .
THIN SOLID FILMS, 1983, 102 (01) :1-46
[3]   Optical properties of SnO2 thin films grown by atmospheric pressure chemical vapour deposition oxidizing SnCl4 [J].
Davazoglou, D .
THIN SOLID FILMS, 1997, 302 (1-2) :204-213
[4]   Criteria for choosing transparent conductors [J].
Gordon, RG .
MRS BULLETIN, 2000, 25 (08) :52-57
[5]  
Hageman PR, 2002, MATER RES SOC SYMP P, V693, P105
[6]  
Hartman P., 1973, CRYST GROWTH, P367
[7]  
JARZEBSKI ZM, 1976, J ELECTROCHEM SOC, V123, pC199, DOI [10.1149/1.2133090, 10.1149/1.2133010, 10.1149/1.2132647]
[8]   X-RAY STUDIES OF SNO2 PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].
KIM, KH ;
CHUN, JS .
THIN SOLID FILMS, 1986, 141 (02) :287-295
[9]   Transport properties of undoped and NH3-doped polycrystalline SnO2 with low background electron concentrations [J].
Korotkov, RY ;
Farran, AJE ;
Culp, T ;
Russo, D ;
Roger, C .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (11) :6445-6453
[10]   PHASE-COMPOSITION OF SNOX THIN-FILMS OBTAINED BY REACTIVE DC SPUTTERING [J].
LEJA, E ;
KORECKI, J ;
KROP, K ;
TOLL, K .
THIN SOLID FILMS, 1979, 59 (02) :147-155