Copper Wire Bonding Concerns and Best Practices

被引:76
作者
Chauhan, Preeti [1 ]
Zhong, Z. W. [2 ]
Pecht, Michael [1 ]
机构
[1] Univ Maryland, CALCE Elect Prod & Syst Ctr, College Pk, MD 20742 USA
[2] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore
关键词
Wire bonding; copper; gold; oxidation; corrosion; humidity; INTEGRATED-CIRCUITS; BALL BONDS; CU; TEMPERATURE; RELIABILITY; AL; OPTIMIZATION; GROWTH; INTERMETALLICS; METALLIZATION;
D O I
10.1007/s11664-013-2576-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Copper wire bonding of microelectronic parts has developed as a means to cut the costs of using the more mature technology of gold wire bonding. However, with this new technology, changes in the bonding processes as well as bonding metallurgy can affect product reliability. This paper discusses the challenges associated with copper wire bonding and the solutions that the industry has been implementing. The paper also provides information to enable customers to conduct qualification and reliability tests on microelectronic packages to facilitate adoption in their target applications.
引用
收藏
页码:2415 / 2434
页数:20
相关论文
共 159 条
[41]   Development of capillaries for wire bonding of low-k ultra-fine-pitch devices [J].
Goh, K. S. ;
Zhong, Z. W. .
MICROELECTRONIC ENGINEERING, 2006, 83 (10) :2009-2014
[42]  
Hai L., 2011, IEEE 13 EL PACK TECH, P53
[43]   Microstructural study of copper free air balls in thermosonic wire bonding [J].
Hang, C. J. ;
Wang, C. Q. ;
Tian, Y. H. ;
Mayer, M. ;
Zhou, Y. .
MICROELECTRONIC ENGINEERING, 2008, 85 (08) :1815-1819
[44]   Wire bonding to advanced copper, low-K integrated circuits, the metal/dielectric stacks, and materials considerations [J].
Harman, GG ;
Johnson, CE .
IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2002, 25 (04) :677-683
[45]  
Hong M., 2012, ASE SPIL MAKE PROGR
[46]  
Hsiang-Chen H., 2010, 34 IEEE CPMT INT EL, V2010, P1
[47]   Characteristic of copper wire and transient analysis on wirebonding process [J].
Hsu, Hsiang-Chen ;
Chang, Wei-Yao ;
Yeh, Chang-Lin ;
Lai, Yi-Shao .
MICROELECTRONICS RELIABILITY, 2011, 51 (01) :179-186
[48]  
Hua C., 2005, C HIGH DENS MICR DES, P1
[49]  
Huang-Kuang K., 2009, 11 EL PACK TECHN C 2, P21
[50]   An investigation into the crystallization and electric flame-off characteristics of 20 μm copper wires [J].
Hung, Fei-Yi ;
Lui, Truan-Sheng ;
Chen, Li-Hui ;
Hsueh, Hao-Wen .
MICROELECTRONICS RELIABILITY, 2011, 51 (01) :21-24