High-Frequency TaOx-Based Compact Oscillators

被引:28
|
作者
Sharma, Abhishek A. [1 ]
Li, Yunlu [1 ]
Skowronski, Marek [2 ]
Bain, James A. [1 ]
Weldon, Jeffrey A. [1 ]
机构
[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
[2] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA
基金
美国国家科学基金会;
关键词
One transistor; one resistor (1T1R); compact oscillator; filament dynamics; filament formation; forming; high frequency; metal-insulator transition; oscillatory neural network (ONN); oxide oscillators; resistive random access memory (RRAM); TaOx;
D O I
10.1109/TED.2015.2475623
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we demonstrate three key features of oxide-based nano-oscillators: 1) the observation of threshold switching and filamentary oscillations in TaOx; 2) the highest frequency achieved by oxide-based oscillators; and 3) a study with linear (resistor) and nonlinear (transistor) ballasts to clearly understand the role of filament dynamics in scaling. These oscillators show frequency tunability over the range of 20 kHz-250 MHz, with 250 MHz being the highest reported frequency for this class of oscillators. Different types of ballasts show frequency tunability using two distinct methods: 1) by tuning the channel resistance of the transistor and 2) by increasing the rail voltage across the ballast-device pair. This sheds new light on the oscillator dynamics for dense oscillator arrays aimed at oscillatory neural networks and other applications.
引用
收藏
页码:3857 / 3862
页数:6
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