Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

被引：1

作者：

Wang Bo ^{[1
,2
]}

Su Shi-Chen ^{[1
]}

He Miao ^{[1
]}

Chen Hong ^{[2
]}

Wu Wen-Bo ^{[1
]}

Zhang Wei-Wei ^{[1
]}

Wang Qiao ^{[1
]}

Chen Yu-Long ^{[1
]}

Gao You ^{[1
]}

Zhang Li ^{[1
]}

Zhu Ke-Bao ^{[1
]}

Lei Yan ^{[1
]}

机构：

[1] S China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China

[2] Chinese Acad Sci, Key Lab Renewable Energy, Beijing Key Lab New Energy Mat & Devices, Beijing Natl Lab Condense Matter Phys,Inst Phys, Beijing 100190, Peoples R China

来源：

CHINESE PHYSICS B | 2013年 / 22卷 / 10期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

GaN; light-emitting diode (LED); undercut; LIGHT-EMITTING-DIODES; NITRIDE-BASED LEDS; EXTRACTION;

D O I：

10.1088/1674-1056/22/10/106802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We use a simple and controllable method to fabricate GaN-based light-emitting diodes (LEDs) with 22 degrees undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching (ICP-RIE). Our experiment results show that the output powers of the LEDs with 22 degrees undercut sidewalls are 34.8 mW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.

引用

页数：4

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