System design and hot zone optimization of monocrystalline silicon directional solidification furnace for PV application

被引：7
作者：
Ma, Xu [1 ]
Zheng, Lili [1 ]
Zhang, Hui [2 ]
机构：
[1] Tsinghua Univ, Sch Aerosp, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2014年 / 385卷
基金：
中国国家自然科学基金;
关键词：
Computer simulation; Directional solidification; Flow pattern; Interfaces; Semiconducting silicon; ADAPTIVE-GRID-GENERATION; CRYSTALLINE SILICON; INTERFACE SHAPE; CASTING PROCESS; SIMULATION;
D O I：
10.1016/j.jcrysgro.2013.04.058
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A monocrystalline silicon directional solidification furnace is designed to increase the productivity and reduce the cost of seeds. In the newly designed furnace, the process is divided into three regions such as seeding, growth, and ending process and different control algorithms are proposed. A 2D transient model is also developed to investigate the capability of the control algorithms for three stages of the solidification process with cone-shaped, constant diameter, and final completing growth. Different control parameters for thermal and flow fields are studied and their impacts on melt flow, thermal field and solidification interface shape, subsequently quality of as grown crystal. Simulation results indicate that by appropriately adjusting the control parameters, optimal thermal and flow fields as well as interface shape can be achieved in the new directional solidification furnace. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：28 / 33
页数：6
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