Filament Evolution during Set and Reset Transitions in Oxide Resistive Switching Memory

被引：7
|
作者：
Ielmini, Daniele [1 ,2 ]
Balatti, Simone [1 ,2 ]
Larentis, Stefano [3 ]
机构：
[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, MI, Italy
[2] IUNET, I-20133 Milan, MI, Italy
[3] Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 04期
关键词：
DRIVEN ION MIGRATION;
D O I：
10.7567/JJAP.52.04CD10
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Bipolar resistive switching memory (RRAM) relies on ion migration effects taking place at a conductive filament (CF). Understanding the evolution of the CF during set and reset transitions is essential for predicting RRAM scalability and for developing new methods for storage and computation. This work describes the evolution of the CF during bipolar resistive switching through numerical simulations of ion drift/diffusion. The defect distribution profile for increasing current after set transition and for increasing voltage during set transition are shown. Finally, the asymmetric shape of the CF is evidenced through polarity-dependent experiments and explained through numerical simulations. (c) 2013 The Japan Society of Applied Physics
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页数：5
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