Long range order in AlxGa1-xN films grown by molecular beam epitaxy

被引：121
作者：
Korakakis, D
Ludwig, KF
Moustakas, TD
机构：
[1] BOSTON UNIV, DEPT ELECT & COMP ENGN, BOSTON, MA 02215 USA
[2] BOSTON UNIV, CTR PHOTON RES, BOSTON, MA 02215 USA
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 01期
关键词：
D O I：
10.1063/1.119916
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The first observation of atomic long range ordering in AlxGa1-xN thin films grown by electron cyclotron resonance assisted molecular beam epitaxy on sapphire and 6H-SiC substrates is reported. The phenomenon was investigated by studying the superlattice peaks (0001), (0003), and (0005) using x-ray diffraction. The relative intensity of these peaks was found to be largest for Al content in the 30%-50% range in qualitative agreement with expectations for an ordered structure of ideal Al0.5Ga0.5N stoichiometry. The average size of the ordered domains in the films was found to be within a factor of 4 of the films' thicknesses. The degree of ordering depends on the III/V flux ratio and exhibits a weaker dependence on Si doping. (C) 1997 American Institute of Physics.
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页码：72 / 74
页数：3
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