Pulse electrodeposited copper indium sulpho selenide films and their properties

被引：2

作者：

Shanmugavel, A. ^{[1
,2
]}

Srinivasan, K. ^{[3
]}

Murali, K. R. ^{[4
]}

机构：

[1] Bharathiar Univ, Ctr Res & Dev, Coimbatore 641046, Tamil Nadu, India

[2] Kanchi Pallavan Engn Coll, Dept Phys, Kancheepuram, India

[3] Govt Engn Coll, Dept Phys, Salem, India

[4] CSIR CECRI, ECMS Div, Karaikkudi 630006, Tamil Nadu, India

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 06期

关键词：

I-III-VI2; Thin films; Semiconductors; Electronic materials; GROWTH;

D O I：

10.1016/j.mssp.2013.05.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Copper indium sulpho selenide films of different composition were deposited by the pulse plating technique at 50% duty cycle (15 s ON and 15 s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium sulpho selenide films. Transmission Electron Microscope studies indicated that the grain size increased from 10 nm-40 nm as the selenium content increased. The band gap of the films was in the range of 0.95 eV-1.44 eV. Room temperature resistivity of the films is in the range of 16.0 Omega cm-33.0 Omega cm. Films of different composition used in photoelectrochemical cells have exhibited photo output. Films of composition,CuInS0.Se-9(0.1) have exhibited maximum output, a V-OC of 0.74 V, J(SC) of 18.50 mA cm(-2), ff of 0.75 and efficiency of 11.40% for 60 mW cm(-2) illumination. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1665 / 1671

页数：7

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