Structure of α-Al2O3(0001) surface and Ti deposited on α-Al2O3(0001) substrate;: CAICISS and RHEED study

被引:71
作者
Suzuki, T
Hishita, S
Oyoshi, K
Souda, R
机构
[1] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 3050044, Japan
[2] Univ Tsukuba, Dept Mat Sci, Tsukuba, Ibaraki 3050006, Japan
关键词
aluminium oxide; epitaxy; low energy ion scattering (LEIS); low index single crystal surfaces; reflection high-energy electron diffraction (RHEED); surface structure; titanium;
D O I
10.1016/S0039-6028(99)00706-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The structure of the alpha-Al2O3(0001) surface and Ti deposited on the alpha-Al2O3(0001) substrate has been investigated using co-axial impact collision ion scattering spectroscopy and reflection high energy electron diffraction. It has been found that the Al2O3 (0001) surface is terminated by an Al layer, as predicted by several theories. The coexistence of Al and O terminated domains has not been observed. In the thickness range of the overlayer Ti films from 4 to 40 monolayers on Al2O3 (0001), the growth mechanism of the deposited films has been revealed to be consistent. The structure of a thick Ti film formed epitaxially on the substrate corresponds to alpha-Ti, while in the initial stage the adsorbed Ti atoms are thought to succeed to the periodicity of the Al2O3 (0001) surface. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:289 / 298
页数:10
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