High TMR Ratio in Co2FeSi and Fe2CoSi Based Magnetic Tunnel Junctions

被引：18

作者：

Sterwerf, Christian ^{[1
]}

Meinert, Markus ^{[1
]}

Schmalhorst, Jan-Michael ^{[1
]}

Reiss, Guenter ^{[1
]}

机构：

[1] Univ Bielefeld, Dept Phys, D-33501 Bielefeld, Germany

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2013年 / 49卷 / 07期

关键词：

Half-metals; Hensler compounds; magnetic films; magnetoresistance; thin films; TMR; X-ray diffraction; CRYSTAL-STRUCTURE; HEUSLER ALLOYS;

D O I：

10.1109/TMAG.2013.2238220

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Magnetic tunnel junctions with Fe1+xCo2-xSi (0 <= x <= 1) electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262% at 15 K and 159% at room temperature were observed for x = 0.75. Correlations of the annealing temperature dependent atomic ordering and TMR amplitude are discussed. The high TMR for an intermediate stoichiometry is ascribed to the adjustment of the Fermi energy within a minority spin pseudo gap.

引用

页码：4386 / 4389

页数：4

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