A shape memory alloy based on photodiode for optoelectronic applications

被引:19
|
作者
Aldirmaz, E. [1 ]
Guler, M. [2 ]
Guler, E. [2 ]
Dere, A. [3 ]
Tataroglu, A. [4 ]
Al-Sehemi, Abdullah G. [5 ,6 ,7 ]
Al-Ghamdi, Ahmed A. [8 ]
Yakuphanoglu, F. [3 ]
机构
[1] Amasya Univ, Fac Sci & Arts, Dept Phys, Amasya, Turkey
[2] Hitit Univ, Fac Sci & Arts, Dept Phys, Corum, Turkey
[3] Firat Univ, Nanosci & Nanotechnol Lab, Elazig, Turkey
[4] Gazi Univ, Dept Phys, Fac Sci, Ankara, Turkey
[5] King Khalid Univ, Dept Chem, Fac Sci, POB 9004, Abha 61413, Saudi Arabia
[6] King Khalid Univ, Res Ctr Adv Mat Sci, POB 9004, Abha 61413, Saudi Arabia
[7] King Khalid Univ, Unit Sci & Technol, Fac Sci, POB 9004, Abha 61413, Saudi Arabia
[8] King Abdulaziz Univ, Dept Phys, Fac Sci, Jeddah 21589, Saudi Arabia
关键词
Schottky diode; Shape memory alloy; Illumination effect; SCHOTTKY DIODE; TRANSFORMATION TEMPERATURES; PHASE-TRANSFORMATION; SINGLE-CRYSTAL; THIN-FILMS; MICROSTRUCTURE; DEPENDENCE; INTERFACE; FREQUENCY; DYE;
D O I
10.1016/j.jallcom.2018.01.380
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A photodiode was fabricated as a Schottky contact using Cu-Al-Mn shape memory alloy and p-Si substrate. The alloy was characterized by some characterization techniques such as (SEM), XRD and DSC. The electrical and photovoltaic properties of the prepared Schottky diode were investigated under various illumination intensities and frequencies. The illumination dependent I-V measurements showed that the diode exhibited a photovoltaic behavior. The electronic parameters of the diode were obtained using various theoretical models. The photo transient behavior of the diode was analyzed under solar light. The admittance measurements indicate that the diode exhibits a dispersive capacitance behavior. The results indicate that the Schottky diode could be used in optic device applications. (c) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:227 / 233
页数:7
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