Influence of Ar/H2 ratio on the characteristics of phosphorus-doped hydrogenated nanocrystalline silicon films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition

被引：1
|
作者：
Zhang, Xueyu [1 ,2 ]
Wu, Aimin [1 ,2 ]
Shi, Shaofei [1 ,2 ]
Qin, Fuwen [1 ,3 ]
Bian, Jiming [3 ]
机构：
[1] Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat, Dalian 116024, Peoples R China
[2] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
[3] Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China
来源：
THIN SOLID FILMS | 2012年 / 521卷
关键词：
Ar/H-2; nc-Si:H; ECR-PECVD; Doping; AMORPHOUS-SILICON; THIN-FILMS;
D O I：
10.1016/j.tsf.2011.12.038
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Phosphorus-doped hydrogenated nanocrystalline silicon films (nc-Si(P):H) were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition. The effect of Ar/H-2 ratio on the characteristics of as-grown nc-Si(P):H films was investigated systematically with Raman scattering, Hall effect measurements as well as Fourier Transform infrared spectroscopy (FTIR). The results indicated that the Ar/H-2 ratio played a critical role for the crystalline quality and electrical properties of the nc-Si:H films. FTIR also showed that infrared spectrum intensity of SiH2 bonding mode peak decreased when Ar/H-2 ratio increased. The optimal value Ar/H-2 ratio of 10/15 was obtained for high quality nc-Si(P):H films with high electron density and the mechanism was elucidated in terms of Raman and FTIR analysis. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码：181 / 184
页数：4
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