Influence of Ar/H2 ratio on the characteristics of phosphorus-doped hydrogenated nanocrystalline silicon films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition

被引：1

作者：

Zhang, Xueyu ^{[1
,2
]}

Wu, Aimin ^{[1
,2
]}

Shi, Shaofei ^{[1
,2
]}

Qin, Fuwen ^{[1
,3
]}

Bian, Jiming ^{[3
]}

机构：

[1] Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat, Dalian 116024, Peoples R China

[2] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China

[3] Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China

来源：

THIN SOLID FILMS | 2012年 / 521卷

关键词：

Ar/H-2; nc-Si:H; ECR-PECVD; Doping; AMORPHOUS-SILICON; THIN-FILMS;

D O I：

10.1016/j.tsf.2011.12.038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Phosphorus-doped hydrogenated nanocrystalline silicon films (nc-Si(P):H) were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition. The effect of Ar/H-2 ratio on the characteristics of as-grown nc-Si(P):H films was investigated systematically with Raman scattering, Hall effect measurements as well as Fourier Transform infrared spectroscopy (FTIR). The results indicated that the Ar/H-2 ratio played a critical role for the crystalline quality and electrical properties of the nc-Si:H films. FTIR also showed that infrared spectrum intensity of SiH2 bonding mode peak decreased when Ar/H-2 ratio increased. The optimal value Ar/H-2 ratio of 10/15 was obtained for high quality nc-Si(P):H films with high electron density and the mechanism was elucidated in terms of Raman and FTIR analysis. (C) 2011 Elsevier B. V. All rights reserved.

引用

页码：181 / 184

页数：4

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