A 60 GHz power amplifier using lange couplers in GaAS 0.15 μm pHEMT process

被引：1

作者：

Wu, Ming-Wei ^{[1
]}

Chiang, Yen-Chung ^{[1
]}

机构：

[1] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2012年 / 54卷 / 09期

关键词：

GaAs pHEMT process; power-added efficiency; power amplifier; Lange coupler; P1dB;

D O I：

10.1002/mop.27015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter proposes a 60 GHz power amplifier (PA) fabricated in GaAs 0.15 mu m pHEMT process technology.A three-stage topology with Lange couplers is adopted. The measured results show that the proposed PA achieves a gain of 23 dB and a saturated output power of 14.46 dBm at 63.4 GHz, and its peak power-added efficiency is 6.9%. (C) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2150-2153, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27015

引用

页码：2150 / 2153

页数：4

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