A novel model for graphene-based ion-sensitive field-effect transistor

被引：5

作者：

El-Grour, Tarek ^{[1
]}

Najari, Montasar ^{[1
,2
]}

El-Mir, Lassaad ^{[1
,3
]}

机构：

[1] Gabes Univ, LAPHYMNE Lab, Gabes, Tunisia

[2] Jazan Univ, IKCE Unit, Jazan, Saudi Arabia

[3] Al Imam Mohammad Ibn Saud Islamic Univ, Riyadh, Saudi Arabia

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2018年 / 17卷 / 01期

关键词：

Graphene field-effect transistors; pH sensor; Sensitivity; Compact modeling; Simulation; DOUBLE-LAYER; MOBILITY;

D O I：

10.1007/s10825-017-1068-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Graphene field-effect transistors (GFETs) are a promising candidate for sensing applications because of their high charge carrier mobility, high flexibility, biocompatibility and the ideal coupling between graphene charge carriers and surface potential. Coating graphene with sensing membrane fabricated high-k materials that can be used to pH sensing in aqueous solutions. This work presents the development of an analytical model for GFET-based pH sensor. This model can help in the investigation of the sensitivity mechanism related to the ambipolar characteristic of the GFET and theory of site binding and a Gouy-Chapman-Stern model. Finally, simulation results are compared with those extracted from experimental measurements and a good agreement is observed which validates the proposed analytical model.

引用

页码：297 / 303

页数：7

共 25 条

[21] Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO2 gate dielectrics grown by atomic layer deposition [J].