PZT Thin Film Bulk Acoustic Wave Resonators and filters

被引：17

作者：

Kirby, PB ^{[1
]}

Su, QX ^{[1
]}

Komuro, E ^{[1
]}

Zhang, Q ^{[1
]}

Imura, M ^{[1
]}

Whatmore, RW ^{[1
]}

机构：

[1] Cranfield Univ, Sch Ind & Mfg Sci, Cranfield MK43 0AL, Beds, England

来源：

PROCEEDINGS OF THE 2001 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM & PDA EXHIBITION | 2001年

关键词：

D O I：

10.1109/FREQ.2001.956364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin Film Bulk Acoustic Wave Resonators (FBAR) using Lead Zirconate Titanate (PZT) thin films as the piezoelectric active layer will be favourable for voltage controlled oscillators and wide band filter due to the large electro-mechanical coupling coefficient of PZT. This paper reports the fabrication process and results of PZT FBARs and filters. The temperature coefficient and bias voltage effect are also presented.

引用

页码：687 / 694

页数：8

共 5 条

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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (04) :769-778

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