PHYSIOCHEMICAL PROPERTIES OF TIN OXIDE THIN FILMS DEPOSITED BY SPRAY PYROLYSIS
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作者:
Janakiraman, V
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Govt Arts Coll Autonomous, PG & Res Dept Phys, Kumbakonam 612002, Tamil Nadu, India
Bharathidasan Univ, Tiruchirappalli, Tamil Nadu, IndiaGovt Arts Coll Autonomous, PG & Res Dept Phys, Kumbakonam 612002, Tamil Nadu, India
Janakiraman, V
[1
,2
]
Tamilnayagam, V
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APA Coll Arts & Culture, Dept Phys, Dindigul, Tamil Nadu, IndiaGovt Arts Coll Autonomous, PG & Res Dept Phys, Kumbakonam 612002, Tamil Nadu, India
Tamilnayagam, V
[3
]
Sundararajan, R. S.
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机构:
Govt Arts Coll Autonomous, PG & Res Dept Phys, Kumbakonam 612002, Tamil Nadu, India
Bharathidasan Univ, Tiruchirappalli, Tamil Nadu, IndiaGovt Arts Coll Autonomous, PG & Res Dept Phys, Kumbakonam 612002, Tamil Nadu, India
Sundararajan, R. S.
[1
,2
]
Sivabalan, S.
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机构:
TBML Coll, Dept Phys, Porayar 609307, Tamil Nadu, IndiaGovt Arts Coll Autonomous, PG & Res Dept Phys, Kumbakonam 612002, Tamil Nadu, India
Sivabalan, S.
[4
]
Sathyaseelan, B.
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Univ Coll Engn Arni, Dept Phys, Arni 632326, Tamil Nadu, IndiaGovt Arts Coll Autonomous, PG & Res Dept Phys, Kumbakonam 612002, Tamil Nadu, India
Sathyaseelan, B.
[5
]
机构:
[1] Govt Arts Coll Autonomous, PG & Res Dept Phys, Kumbakonam 612002, Tamil Nadu, India
[2] Bharathidasan Univ, Tiruchirappalli, Tamil Nadu, India
[3] APA Coll Arts & Culture, Dept Phys, Dindigul, Tamil Nadu, India
[4] TBML Coll, Dept Phys, Porayar 609307, Tamil Nadu, India
[5] Univ Coll Engn Arni, Dept Phys, Arni 632326, Tamil Nadu, India
SnO2 thin films;
Spray pyrolysis;
Band gap;
Gas sensors;
OPTICAL-PROPERTIES;
SNO2;
NANOSTRUCTURES;
GROWTH;
PURE;
ZNO;
D O I:
暂无
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
In this article, tin oxide film is deposited onto glass substrates at 350 degrees C by spray pyrolysis technique. The nature of nanoparticles is investigated using X-ray diffraction, UV-visible spectroscopy, and Fourier transforms infrared spectra. XRD studies are shown that the thin film orientations along (110), (101), (200), (211), (220), (310), (301), and (321) planes. The phase structure is polycrystalline with tetragonal rutile. The average crystallite sizes are determined. Field emission scanning electron microscopy analysis shows that SnO2 thin film with irregular grains and irregular shapes was found. A Fourier transform infrared spectra characteristics for pure SnO2 thin films explains various vibrational assignment modes. Energy dispersive spectroscopy analysis confirms the elements of deposited thin films on the glass substrate. UV visible absorption spectra show that the band gap of SnO2 thin film is 3.57 eV. The SnO2 thin films are prepared using a simple and economical technique with the advantage that they are used for optoelectronic devices and gas sensor applications.
机构:
Shivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, IndiaShivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, India
Patil, P. S.
Sadale, S. B.
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Shivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, IndiaShivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, India
Sadale, S. B.
Mujawar, S. H.
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Shivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, IndiaShivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, India
Mujawar, S. H.
Shinde, P. S.
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Shivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, IndiaShivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, India
Shinde, P. S.
Chigare, P. S.
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机构:
Shivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, IndiaShivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, India
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Ji, ZG
Zhao, LN
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhao, LN
He, ZP
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
He, ZP
Zhou, Q
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhou, Q
Chen, C
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China