Electronic Structure and Energy Band of IIIA Doped Group ZnO Nanosheets

被引：25

作者：

Feng, Xian-Yang ^{[1
]}

Wang, Zhe ^{[1
]}

Zhang, Chang-Wen ^{[1
]}

Wang, Pei-Ji ^{[1
]}

机构：

[1] Univ Jinan, Sch Phys, Jinan 250022, Peoples R China

来源：

JOURNAL OF NANOMATERIALS | 2013年 / 2013卷

基金：

中国国家自然科学基金;

关键词：

ZINC-OXIDE; FERROMAGNETISM; 1ST-PRINCIPLES; DEVICES; FILMS;

D O I：

10.1155/2013/181979

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electronic andmagnetic properties of IIIA group doped ZnO nanosheets (ZnONSs) are investigated by the first principles. The results show that the band gap of ZnO nanosheets increases gradually along with Al, Ga, and In ions occupying Zn sites and O sites. The configuration of Al atoms replacing Zn atoms is more stable than other doped. The system shows half-metallic characteristics for In-doped ZnO nanosheets.

引用

页数：6

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