Heteroepitaxial growth and multiferroic properties of Mn-doped BiFeO3 films on SrTiO3 buffered III-V semiconductor GaAs

被引：13

作者：

Gao, G. Y. ^{[1
,2
]}

Yang, Z. B. ^{[1
]}

Huang, W. ^{[1
,3
]}

Zeng, H. Z. ^{[3
]}

Wang, Y. ^{[1
]}

Chan, H. L. W. ^{[1
]}

Wu, W. B. ^{[2
]}

Hao, J. H. ^{[1
]}

机构：

[1] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

[2] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China

[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 09期

关键词：

THIN-FILMS; HETEROSTRUCTURES; TRANSISTOR; INTERFACE; SILICON; STRAIN; SI;

D O I：

10.1063/1.4820579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial Mn-doped BiFeO3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (00l) orientation, and MBFO (100)//STO(100), whereas STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaAs have an effective ferroelectric switching. The MBFO films exhibit good ferroelectric behavior (2P(r) similar to 92 mu C/cm(2) and 2E(C) similar to 372 kV/cm). Ferromagnetic property with saturated magnetization of 6.5 emu/cm(3) and coercive field of about 123 Oe is also found in the heterostructure at room temperature. (C) 2013 AIP Publishing LLC.

引用

页数：5

共 35 条

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