Growth ambient on memory characteristics in Au nanoclusters embedded in high-k dielectric as novel non-volatile memory

被引：6
|
作者：
Chan, K. C. [1 ]
Lee, P. F. [1 ]
Dai, J. Y. [1 ]
机构：
[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
来源：
MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 12期
关键词：
Metal nanoclusters; Au; Floating gate memory; Flash memory;
D O I：
10.1016/j.mee.2008.09.031
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we report on the findings of the effects of different ambient on memory characteristics of a floating gate memory structure containing HfAlO control gate, self-organized Au nanoclusters (NCs), and a HfAlO tunnel layer deposited by the pulsed-laser deposition. The optimized fabrication environment has been found and stored charge density up to 10(13) cm(-2) has been achieved. As the sizes of the Au NCs are smaller than 4 nm, they may be potentially used in multilayer-structured multi-bit memory cell. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：2385 / 2387
页数：3
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