The upconversion luminescence research of HoYb:YVO4

被引：12
作者：
Chen, XB [1 ]
Liu, K
Zhuang, J
Wang, GW
Chen, CT
机构：
[1] Beijing Normal Univ, Opt Ctr, Beijing 100875, Peoples R China
[2] Beijing Normal Univ, Key Lab Beam Technol & Mat Modificat, Chinese Minist Educ, Beijing 100875, Peoples R China
[3] Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350001, Peoples R China
[4] Peking Univ, Dept Phys, Beijing 100871, Peoples R China
来源：
ACTA PHYSICA SINICA | 2002年 / 51卷 / 03期
关键词：
upconversion luminescence; direct sensitization; YVO4; crystal; HO3+ ion;
D O I：
10.7498/aps.51.690
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
This paper studies the direct upconversion sensitization luminescence of the Ho3+ and Yb3+ ion codoped HoYb:YVO4 crystal excited by 960nm laser-diode initially. The interesting upconversion luminescence phenomenon has been found. The most strong upconversion luminescence line of the HoYb:YVO4 crystal is F-5(5)-->(5)Ig transition, and that of S-5(2) --> I-5(8) is ten times smaller relatively. It resulted from the fact that HoYb:YVO4 crystal has both strong oscillation strength and multiphonon nonraditive relaxation rate.
引用
收藏
页码：690 / 695
页数：6
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